Nano grapheme, silicon based flexible transparent memory

Memory Devices Computers and many electronic gadgets usually rely on stored information which is mainly data which can be used to direct circuit actions. The digital information is stored in memory devices. The long-term nanotechnology prospects for memory devices include carbon-nanotube-based memory, molecular electronics and memristors based on resistive materials such as TiO2. Transparent memory Transparent electronic memory has an advantage in that it would be useful in integrated transparent electronics, but achieving such a transparency produces limits in material composition and hinders processing and device performance. Here we present a route to fabricate highly transparent memory using SiOx as the active material and indium tin oxide or graphene as the electrodes. The two-terminal, non-volatile resistive memory can also be configured in crossbar arrays on glass or flexible transparent platforms. The filamentary conduction in silicon channels generated in situ in the SiOx main